Hafnium- ntype silicon Schottky barriers

摘要: Abstract This paper describes the electrical properties of hafnium-/ n -type/silicon contacts. These contacts were found to be Schottky barriers with a low barrier height. Polished and chemically cleaned 〈111〉 silicon wafers donor concentration N d = 7 × 10 22 m −3 used fabricate experimental structures. For height φ bn ideality factor values 0.47 V 1.07–1.11, respectively. It is concluded that due their forward voltage drop good rectifying properties, Hf- Si can applied in microwave diodes.