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作者: K. Kajiyama , S. Sakata , O. Ochi
DOI: 10.1063/1.321980
关键词:
摘要: Schottky barrier heights of 0.72 V for Hf/n‐GaAs and 0.68 Hf/p‐GaAs are experimentally obtained. These values agree with the empirical rule. Existence an interfacial insulating layer is suggested.
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