Barrier height of Hf/GaAs diode

作者: K. Kajiyama , S. Sakata , O. Ochi

DOI: 10.1063/1.321980

关键词:

摘要: Schottky barrier heights of 0.72 V for Hf/n‐GaAs and 0.68 Hf/p‐GaAs are experimentally obtained. These values agree with the empirical rule. Existence an interfacial insulating layer is suggested.

参考文章(7)
M. Beguwala, C. R. Crowell, Determination of hafnium‐p‐type silicon Schottky barrier height Journal of Applied Physics. ,vol. 45, pp. 2792- 2794 ,(1974) , 10.1063/1.1663673
A. M. Cowley, S. M. Sze, Surface States and Barrier Height of Metal‐Semiconductor Systems Journal of Applied Physics. ,vol. 36, pp. 3212- 3220 ,(1965) , 10.1063/1.1702952
K. Kajiyama, S. Sakata, Y. Mizushima, Schottky-barrier devices with low barrier height Proceedings of the IEEE. ,vol. 62, pp. 1287- 1288 ,(1974) , 10.1109/PROC.1974.9614
Homer D. Hagstrum, Thermionic Constants and Sorption Properties of Hafnium Journal of Applied Physics. ,vol. 28, pp. 323- 328 ,(1957) , 10.1063/1.1722740
J. F. Ziegler, J. W. Mayer, C. J. Kircher, K. N. Tu, Kinetics of the formation of hafnium silicides on silicon Journal of Applied Physics. ,vol. 44, pp. 3851- 3857 ,(1973) , 10.1063/1.1662861
K. Kajiyama, Y. Mizushima, S. Sakata, Schottky barrier height of n‐InxGa1−xAs diodes Applied Physics Letters. ,vol. 23, pp. 458- 459 ,(1973) , 10.1063/1.1654957