Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers

摘要: In the presence of an interfacial layer and semiconductor surface states, a Schottky barrier height φb decreases with increasing electric field E at semiconductor. If doping concentration Nd is uniform throughout depletion region if [ (qNd/e) (dφb/dE)−E] (d2φb/dE2) (dE/dV) ]≪1, where V applied voltage e permittivity, slope (capacitance)−2 vs relationship constant can be interpreted to give Nd. The intercept yields apparent φa related true by φa=φb−E (dφb/dE) + (qNd/2e) (dφb/dE)2, q electron charge. From measured variation one absolute measure value Nd, φb(E), dφb(E)/dE may deduced. state density as function energy in bandgap minimum interface thickness divided relative permittivity obtained. Using data A...