FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要: PURPOSE: A flash memory device is provided to suppress the lateral migration of charge storage layer by increasing side channel distance electric charge. CONSTITUTION: The includes semiconductor substrate(100), pin(100a) for a channel, first element isolation film(120), tunnel insulating layer(130), insulator(140), second film(150), blocking insulation film(170), and gate electrode(180). trench(110) formed in substrate. pin perpendicularly extended from substrate between trenches. films are trench bottom. along surface exposed channel. insulator layer. on trench. film insulator. electrode film.