NOR gate flash memory and manufacturing method thereof
作者： Feng Jun , Shu Qingming
DOI:
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摘要: The invention discloses a NOR gate flash memory and manufacturing method thereof. comprises the steps that an active area deep isolation groove are formed, oxidation layer is formed in groove; shallow grooves formed; tunneling gate-oxide floating sequentially on upper surface of part, exposed out grooves, substrate; interlayer dielectric substance control etched, every two adjacent divided into group, sacrificial between each group etched; layers substrate exposed; side wall film public source electrode line drain contact hole formed. According to thereof, technology simple, cost low, feasibility volume production achieved, consistency reliability improved.
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