Method of manufacturing a semiconductor device with a self-aligned polysilicon electrode
作者： Taek-Jung Kim , Min Kim
DOI:
关键词: Etching (microfabrication) 、 Semiconductor device 、 Layer (electronics) 、 Structural engineering 、 Void (composites) 、 Substrate (electronics) 、 Materials science 、 Optoelectronics 、 Electrode
摘要: In a method of manufacturing semiconductor device, an isolation pattern is formed on substrate. The includes opening that exposes portion the A preliminary polysilicon layer substrate and to partially fill up opening. sacrificial layer. etched expose shoulder pattern. first by etching exposed enlarge upper width After removed, second enlarged Because larger than lower width, no seam or void would be generated in layer, therefore improving electrical characteristics reliability device.
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