Characterization of Tantalum Nitride Thin Films Fabricated by Pulsed Nd:YAG Laser Deposition Method
作者： Hiroharu Kawasaki , Kazuya Doi , Jun Namba , Yoshiaki Suda , Tamiko Ohshima
DOI: 10.1143/JJAP.40.2391
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摘要: Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties TaN strongly depend substrate temperatures and nitrogen gas pressures. This suggests both phase reaction in plasma plume surface are important for preparing films.
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