Effects of Al3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems
作者： Mayumi Takeyama , Atsushi Noya , Katsutaka Sasaki
DOI: 10.1143/JJAP.35.699
关键词: Structural change 、 Composite material 、 Diffraction 、 Mineralogy 、 Thermal stability 、 Minimum free energy 、 Chemistry 、 Grain growth 、 Annealing (metallurgy) 、 Contact system 、 Thin film
摘要: A thermally stable contact system of Al/Al3Ta/TaN/Si, which tolerates post-metallization annealing even at 600° C for 1 h, was successfully prepared by achieving a state chemical pseudo-equilibrium the interface Al/Al3Ta and that Al3Ta/TaN. No solid-phase reactions took place these interfaces due to realization minimum free energy states. The thermal stability in discussed from point view reaction thin films. It also revealed X-ray diffraction analysis absence structural change grain growth both TaN Al3Ta layers is effective total system. We have been able demonstrate validity realizing preparing systems.
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