Formation of Al3Ta by Ta ion implantation into aluminum using a metal vapor vacuum arc ion source
作者： Miao Wei , Tao Kun , Liu Xingtao , Liu Baixin
DOI: 10.1016/S0025-5408(01)00636-5
关键词:
摘要: Abstract The intermetallic compound Al 3 Ta was directly formed by ion implantation into aluminum with a current density of 64 μA/cm 2 using metal vapor vacuum arc source at dose × 10 17 ions/cm . With increasing dose, the content phase increased. At 7 , Ta-aluminide layer about 350 nm thick. aluminide played significant role in enhancing surface hardness matrix.
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sci-hub.se 参考文章(11)
J.R. Davis, Aluminum and Aluminum Alloys ,(1993)
Katsutaka Sasaki, Atsushi Noya, Toshiji Umezawa, Preparation and Characterizations of Al3Ta Intermetallic Compound Films Japanese Journal of Applied Physics. ,vol. 27, pp. 1190- 1192 ,(1988) , 10.1143/JJAP.27.1190
R. Pretorius, A. M. Vredenberg, F. W. Saris, R. de Reus, Prediction of phase formation sequence and phase stability in binary metal-aluminum thin-film systems using the effective heat of formation rule Journal of Applied Physics. ,vol. 70, pp. 3636- 3646 ,(1991) , 10.1063/1.349211
E. G. Colgan, J. W. Mayer, Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W Journal of Materials Research. ,vol. 4, pp. 815- 820 ,(1989) , 10.1557/JMR.1989.0815
Ji. Chengzhou, Zhang Tonghe, Zhang Huixing, Xie Jindong, Wang Anmin, Metallic ion implantation by using a MEVVA ion source Radiation Effects and Defects in Solids. ,vol. 129, pp. 161- 172 ,(1994) , 10.1080/10420159408229015
Jaehwa Kim, Dong-Soo Yoon, Joon Seop Kwak, Hong Koo Baik, Sung-Man Lee, Study on Ta diffustion barrier in Al/Si system Journal of Electronic Materials. ,vol. 28, pp. 6- 12 ,(1999) , 10.1007/S11664-999-0187-7
JK Howard, JF White, PS Ho, None, Intermetallic compounds of Al and transitions metals: Effect of electromigration in 1-2-μm-wide lines Journal of Applied Physics. ,vol. 49, pp. 4083- 4093 ,(1978) , 10.1063/1.325369
Mayumi Takeyama, Atsushi Noya, Katsutaka Sasaki, Effects of Al3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems Japanese Journal of Applied Physics. ,vol. 35, pp. 699- 703 ,(1996) , 10.1143/JJAP.35.699
Marc Wittmer, High-temperature contact structures for silicon semiconductor devices Applied Physics Letters. ,vol. 37, pp. 540- 542 ,(1980) , 10.1063/1.91978
JK Howard, RF Lever, PJ Smith, PS Ho, None, Kinetics of compound formation in thin film couples of Al and transition metals Journal of Vacuum Science and Technology. ,vol. 13, pp. 68- 71 ,(1976) , 10.1116/1.568959