Mass transfer of metal ion implantation into metal targets at elevated temperatures
作者： H.W. Chang , M.K. Lei
DOI: 10.1016/J.COMMATSCI.2004.10.001
关键词:
摘要: A mass transfer model for metal ion implantation into a target at elevated temperatures has been built up based on transport of ions in matter and radiation enhanced diffusion. It is used to calculate concentration-depth profiles compositional changes the implanted species. The was simulated by dynamic Monte Carlo (MC) method, which takes account local saturation crystalline using maximum atomic fraction allowed matrix. For diffusion process, species obtained from equations nonequilibrium vacancies. coefficient taking linear annealing defects. vacancy source function surface sputtering were introduced equations. Concentration-depth Cr, Fe Ni Al temperature range 200 510 °C calculated. calculated results principally consistent with measured Rutherford backscattering spectroscopy (RBS). In some cases deviations occur, are discussed.
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