Auger Electron Spectroscopy Study on the Stability and the Interfacial Reaction of Ta, Ta-N and TaN Films as a Diffusion Barrier between Cu9Al4Film and Si

摘要: The diffusion barrier properties of Ta, Ta-N and TaN films to Si the Cu9Al4 compound have been studied by examining depth profiles obtained from Auger electron spectroscopy. contact system degrades with silicide formation at interface between substrate. temperature these was 650°C for Ta 700°C one. using tolerates a 750°C. atoms are diffusing species in present study, which protects catastrophic failure due intermixing all elements higher temperatures.