First phase nucleation of metal‐rich silicide in Ta/Si systems
作者： Atsushi Noya , Mayumi Takeyama , Katsutaka Sasaki , Taichi Nakanishi
DOI: 10.1063/1.357394
关键词:
摘要: Solid‐phase reactions in the interfacial region of Ta/(100)Si systems have been studied by x‐ray diffraction and Auger electron spectroscopy. The metal‐rich silicide Ta5Si3, which has never observed Ta/Si so far, is first nucleated at annealing temperatures 600–650 °C stage reaction. Subsequent 700 °C leads to formation a TaSi2 phase, phase replaced over out‐diffusion Si.
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Norman G. Einspruch, Vlsi Electronics: Microstructure Science ,(1982)
M. H. Wang, L. J. Chen, Identification of the first nucleated phase in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on silicon Applied Physics Letters. ,vol. 58, pp. 463- 465 ,(1991) , 10.1063/1.104608
Karen Holloway, Peter M. Fryer, Cyril Cabral, J. M. E. Harper, P. J. Bailey, K. H. Kelleher, Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions Journal of Applied Physics. ,vol. 71, pp. 5433- 5444 ,(1992) , 10.1063/1.350566
J. M. Poate, K. N. Tu, J. W. Mayor, Archibald L. Fripp, Thin Films—Interdiffusion and Reactions Journal of The Electrochemical Society. ,vol. 126, ,(1979) , 10.1149/1.2129351
Atsushi Noya, Katsutaka Sasaki, Mayumi Takeyama, Auger Electron Spectroscopy Study on the Stability and the Interfacial Reaction of Ta, Ta-N and TaN Films as a Diffusion Barrier between Cu9Al4Film and Si Japanese Journal of Applied Physics. ,vol. 32, pp. 911- 915 ,(1993) , 10.1143/JJAP.32.911
W. Y. Hsieh, J. H. Lin, L. J. Chen, Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111)Si Applied Physics Letters. ,vol. 62, pp. 1088- 1090 ,(1993) , 10.1063/1.108803
R. M. Walser, R. W. Bené, First phase nucleation in silicon–transition‐metal planar interfaces Applied Physics Letters. ,vol. 28, pp. 624- 625 ,(1976) , 10.1063/1.88590
A. Appelbaum, M. Eizenberg, Silicides formation for refractory metal alloys (Ta‐V and Ti‐V) on Si Journal of Applied Physics. ,vol. 56, pp. 2341- 2345 ,(1984) , 10.1063/1.334271
M. Eizenberg, S. P. Murarka, P. A. Heimann, Interaction of reactively sputtered titanium carbide thin films with Si, SiO2Ti, TiSi2, and Al Journal of Applied Physics. ,vol. 54, pp. 3195- 3199 ,(1983) , 10.1063/1.332479
M. Ben‐Tzur, M. Eizenberg, Interfacial reactions between thin films of Ti–Ta and single crystalline Si Journal of Vacuum Science and Technology. ,vol. 9, pp. 2721- 2726 ,(1991) , 10.1116/1.577189