Electronic transport properties of graphene doped by gallium

摘要: In this work we present the effect of low dose gallium (Ga) deposition (<4 ML) performed in UHV (10-7 Pa) on electronic doping and charge carrier scattering graphene grown by chemical vapor deposition. situ transport measurements with a field-effect transistor structure show that at Ga coverages layer tends to be strongly n-doped an efficiency 0.64 electrons per one atom, while further cluster formation results removing from (less n-doping). The experimental are supported density functional theory calculations explained as consequence distinct interaction between atoms case individual atoms, layers, or clusters.