Reversible photodarkening of amorphous arsenic chalcogens

摘要: Abstract Illumination with bandgap light induces changes in physical properties of many chalcogenide semiconductors. Fundamental aspects strike reversible photodarkening (the light-induced red-shift the optical absorption edge) arsenic-chalcogen glasses are critically reviewed. For understanding at microscopic level, details atomic structure that accompany shift edge particular importance. Study structural by a variety techniques has revealed phenomenon rich basic physics but not led coherent picture underlying mechanism. Application advanced experimental probes providing more detailed information clarified some fundamental and their relation to electronic mechanical properties. Modifications short-range intermediate-range order photodarkening. The form increased AsAs bonding very small probably do play predominant role structure. Evidence suggests primary effect is modification correlations.