Monte-Carlo studies of thin film growth

作者: T.J Coutts , B Hopewell

DOI: 10.1016/0040-6090(72)90329-X

关键词:

摘要: Abstract A digital process for the simulation of random networks, considered to be analogous structure semicontinuous films, is described. It shown that early stage “growth” model similar coalescence growth thin films. As continued reached where becomes electrically continuous. This calculated using simple theory. The “resistance” at subsequent stages computed. variation with a parameter fractional coverage substrate shown, lattices used, very experimental observations. At given growth, standard deviation in resistance related size used.

参考文章(6)
T.J. Coutts, Conduction in thin cermet films Thin Solid Films. ,vol. 4, pp. 429- 443 ,(1969) , 10.1016/0040-6090(69)90092-3
C. Domb, F. T. Hioe, Mean‐Square Intrachain Distances in a Self‐Avoiding Walk The Journal of Chemical Physics. ,vol. 51, pp. 1915- 1919 ,(1969) , 10.1063/1.1672277
H. L. Frisch, J. L. Lebowitz, Electron Transport at High Temperatures in the Presence of Impurities Physical Review. ,vol. 123, pp. 1542- 1549 ,(1961) , 10.1103/PHYSREV.123.1542
C. A. Neugebauer, M. B. Webb, Electrical Conduction Mechanism in Ultrathin, Evaporated Metal Films Journal of Applied Physics. ,vol. 33, pp. 74- 82 ,(1962) , 10.1063/1.1728531
Werner Kuhn, Über die Gestalt fadenförmiger Moleküle in Lösungen Colloid and Polymer Science. ,vol. 68, pp. 2- 15 ,(1934) , 10.1007/BF01451681