作者: T.J Coutts , B Hopewell
DOI: 10.1016/0040-6090(72)90329-X
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摘要: Abstract A digital process for the simulation of random networks, considered to be analogous structure semicontinuous films, is described. It shown that early stage “growth” model similar coalescence growth thin films. As continued reached where becomes electrically continuous. This calculated using simple theory. The “resistance” at subsequent stages computed. variation with a parameter fractional coverage substrate shown, lattices used, very experimental observations. At given growth, standard deviation in resistance related size used.