Side optical cavity, single quantum well diode laser
作者： Dale L. Partin , Joseph P. Heremans , Christopher M. Thrush
DOI: 10.1016/0749-6036(86)90012-1
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摘要: Abstract Large optical cavity single quantum well PbEuSeTe diode lasers recently attained the highest temperatures yet observed to our knowledge for long wavelength (g > 3)m) lasers. Current studies of PbTe/PbEuSeTe wells by transport and luminescence techniques suggest that most band edge offset at a heterojunction is in valence band. Thus 3odified, side structure was grown which PbTe active region placed one large maximize potential barrier and, therefore, limit electron leakage out well. This resulted lowest threshold currents we have these devices — 10 mA 80 K 120 (1.6 KA/cm2) 160 under CW conditions. device lased up 175 = 4.47)m), lasing temperature so far. These results support finding conduction relatively small heterojunctions.
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