Dielectric breakdown in high-ε films for ULSI DRAMs

摘要: Abstract Dielectric breakdown has been studied in several materials intended for high-dielectric DRAMs (dynamic random access memories), emphasizing lead zirconate-titanate (PZT) and barium strontium titanate (BST) ceramics. In this paper we present our results on PZT. A second will deal with BST. order to distinguish among impulse thermal breakdown, de avalanche mechanisms, studies have carried out as functions of temperature, electrode material shape, frequency duration applied fields, specimen size shape. Notable the is fact that maximum field varies directly work function but uncorrelated conductivity; militates against a purely interpretation instead favors an mechanism which iniation step impact ionization Ti ions from electrons emitted electrodes, followed by run-away. Thickness dependence also a...