Mid-infrared photoconductivity in InAs quantum dots
作者： KW Berryman , SA Lyon , Mordechai Segev , None
DOI: 10.1063/1.118714
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摘要: Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the an AlxGa1−xAs matrix, normal incidence has been observed at a range of wavelengths mid-infrared and attributed to single carrier transitions out dots. The optical response investigated for several different dot structures.
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