Defects and electrical properties of doped and undoped CdTe single crystals from tellurium-rich solutions
作者： E. Weigel , G. Müller-Vogt , B. Steinbach , W. Wendl , W. Stadler
DOI: 10.1016/0921-5107(93)90006-9
关键词:
摘要: CdTe single crystals have been grown using either the Bridgman or travelling-heater technique. Crystals doped with indium chlorine were compared those without any intentional dopant. With high resolution atomic absorption spectroscopy analysis it was possible to measure effective segregation coefficient of down concentrations 3 × 1015 In atoms cm−3. Higher amounts resulted in n-type conductivity but, less than 1 1015cm−3, p type, as is always case for undoped crystals. Photoluminescence spectra taken from as-grown samples and annealed at 380°C 780°C subsequent quenching revealed A centre but require reconsideration role this complex compensation models.
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