作者: F. Rullier-Albenque , A. Legris , S. Bouffard , E. Paumier , P. Lejay
DOI: 10.1016/0921-4534(91)90241-P
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摘要: Abstract Single crystals of YBa2Cu3O7−δ were irradiated at 95 K by 5.6 GeV Xe ions and the evolutions superconducting resistive curves - measured parallel perpendicular to c axis determined in situ as a function ion fluences. We find that ϱc ϱab increase linearly with fluence even tend saturate for highest This behaviour strongly differs from found sintered samples under same conditions which quasi-exponential resistance was observed. Nevertheless our results confirm energy deposition electronic excitation plays role defect creation previously reported samples.