Development of 230-270 nm AlGaN-based deep-UV LEDs
作者： Hideki Hirayama , Tohru Yatabe , Norimichi Noguchi , Norihiko Kamata
DOI: 10.1002/ECJ.10197
关键词:
摘要: We demonstrated AlGaN multi-quantum well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 227.5 to 273 nm fabricated on high-quality AlN buffers sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). realized crack-free, thick a low threading dislocation density (TDD) and an atomically flat surface using ammonia (NH3) pulse-flow multilayer (ML) growth technique. obtained single-peaked operation AlGaN-MQW LED wavelength nm, which is shortest AlGaN-based sapphire. The maximum output power external quantum efficiency (EQE) 261- 227.5-nm LEDs were 1.65 mW 0.23% room-temperature (RT) continuous-wave (CW) operation, 0.15 0.2% RT pulsed respectively. © 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(3): 24–33, 2010; Published online InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10197
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