Optical storage medium comprising a mask layer with a super resolution near field structure
作者： Gael Pilard , Stephan Knappmann , Christophe Fery , Larisa Pacearescu
DOI:
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摘要: The optical storage medium according to the invention uses a mask layer (2) as super resolution near field structure, which comprises doped semiconductor material. material is n-doped particularly such that reflectivity of increased, when irradiated with laser beam. As advantageously an indium alloy and doping selenium or tellurium can be used. For manufacturing respective sputtering method for depositing used, wherein dopant included already in target.
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