Dual deposition single level lift-off process

作者: James W. Penney

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摘要: A dual deposition liftoff process is provided for obtaining clearly defined, planar integrated circuit pattern definition. After developing a photoresist on substrate, thin layer of sealing material which compatible with the deposited over and uncovered portions substrate. The sidewalls are then etched, thereby undercutting forming lip overhangs sidewalls. second top to provide required thickness circuit. overhanging protects from thus good its overlying layers obtained.

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