Silicon carbide schottky barrier diode and method of making
作者： Dev Internationaal Octrooibureau B.V. Alok
DOI:
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摘要: A Schottky barrier diode and process of making is disclosed. The forms a metal contact pattern in masked areas on silicon carbide wafer. preferred embodiment includes insulating layer that etched the windows mask. An inert edge termination implanted into wafer beneath oxide adjacent contacts to improve reliability. further may be added surface resistance physical damage.
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