Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy
作者： S. Chevtchenko , X. Ni , Q. Fan , A. A. Baski , H. Morkoç
DOI: 10.1063/1.2188589
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摘要: We report the value of surface band bending for undoped, a-plane GaN layers grown on r-plane sapphire by metalorganic vapor phase epitaxy. The potential was measured directly ambient scanning Kelvin probe microscopy. upward films in [112¯0] direction found to be 1.1±0.1V. Because polarization effects are not present GaN, we attribute such presence charged states. have modeled assuming a localized level states gap surface. It should noted that observed is comparable obtained polar c-plane layers, and both with similar treatments demonstrate behavior, indicating dominate banding cases.
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