Effect of Auger recombination on the performance of p-doped quantum dot lasers
作者： S. Mokkapati , M. Buda , H. H. Tan , C. Jagadish
DOI: 10.1063/1.2193433
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摘要: Experimental results on spontaneous emission rates from InGaAs quantum dot lasers that can be explained theoretically by considering the influence of nonradiative mixed state recombinations in dot-wetting layer system are presented. Our model qualitatively explains experimental such as an increase threshold current density, temperature stability, and a narrower gain spectrum due to doping active region with acceptors. also predicts moderate acceptor concentrations improve laser performance at higher carrier injection densities; but high deteriorate Auger recombination counteracts benefits increased rates.
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