Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers
作者： I. P. Marko , N. F. Massé , S. J. Sweeney , A. D. Andreev , A. R. Adams
DOI: 10.1063/1.2135204
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摘要: The radiative and nonradiative components of the threshold current in 1.3μm, p-doped undoped quantum-dot semiconductor lasers were studied between 20 370K. complex behavior can be explained by simply assuming that recombination Auger rates are strongly modified thermal redistribution carriers dots. large differences devices arise due to trapped holes devices. These both greatly increase involving hole excitation at low temperatures decrease electron escape their Coulombic attraction. model explains high T0 values observed near room temperature.
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