Ductile mode material removal and high-pressure phase transformation in silicon during micro-laser assisted machining

作者: Deepak Ravindra , Muralidhar K. Ghantasala , John Patten

DOI: 10.1016/J.PRECISIONENG.2011.12.003

关键词:

摘要: … Micro Raman spectroscopy is used to study the high pressure phases. ► High laser powers … This may be attributed to the recrystallization of the material, during which the high pressure …

参考文章(16)
Y.G. Gogotsi, A. Kailer, K.G. Nickel, Phase transformations in materials studied by micro-Raman spectroscopy of indentations Materials Research Innovations. ,vol. 1, pp. 3- 9 ,(1997) , 10.1007/S100190050011
A. Kailer, Y. G. Gogotsi, K. G. Nickel, Phase transformations of silicon caused by contact loading Journal of Applied Physics. ,vol. 81, pp. 3057- 3063 ,(1997) , 10.1063/1.364340
Daibin Ge, Vladislav Domnich, Yury Gogotsi, Thermal stability of metastable silicon phases produced by nanoindentation Journal of Applied Physics. ,vol. 95, pp. 2725- 2731 ,(2004) , 10.1063/1.1642739
J. S. Williams, W. L. Brown, H. J. Leamy, J. M. Poate, J. W. Rodgers, D. Rousseau, G. A. Rozgonyi, J. A. Shelnutt, T. T. Sheng, Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation Applied Physics Letters. ,vol. 33, pp. 542- 544 ,(1978) , 10.1063/1.90430
P.S Sreejith, B.K.A Ngoi, Material removal mechanisms in precision machining of new materials International Journal of Machine Tools & Manufacture. ,vol. 41, pp. 1831- 1843 ,(2001) , 10.1016/S0890-6955(01)00014-1
R. J. Needs, A. Mujica, First-principles pseudopotential study of the structural phases of silicon Physical Review B. ,vol. 51, pp. 9652- 9660 ,(1995) , 10.1103/PHYSREVB.51.9652
Peter N. Blake, Ronald O. Scattergood, Ductile‐Regime Machining of Germanium and Silicon Journal of the American Ceramic Society. ,vol. 73, pp. 949- 957 ,(1990) , 10.1111/J.1151-2916.1990.TB05142.X
M. Hanfland, M. Alouani, K. Syassen, N. E. Christensen, Optical properties of metallic silicon Physical Review B. ,vol. 38, pp. 12864- 12867 ,(1988) , 10.1103/PHYSREVB.38.12864
A. Polman, P. A. Stolk, D. J. W. Mous, W. C. Sinke, C. W. T. Bulle‐Lieuwma, D. E. W. Vandenhoudt, Pulsed‐laser crystallization of amorphous silicon layers buried in a crystalline matrix Journal of Applied Physics. ,vol. 67, pp. 4024- 4035 ,(1990) , 10.1063/1.346076
M. Alouani, L. Brey, N. E. Christensen, Calculated optical properties of semiconductors. Physical Review B. ,vol. 37, pp. 1167- 1179 ,(1988) , 10.1103/PHYSREVB.37.1167