In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
作者： X. Liu , J. Kim , D. J. Suntrup , S. Wienecke , M. Tahhan
DOI: 10.1063/1.4886768
关键词:
摘要: The in situ metalorganic chemical vapor deposition (MOCVD) of Al2O3 dielectrics on N-face GaN is reported. near-interface fixed charges are measured by using capacitance-voltage techniques a metal-oxide-semiconductor (MOSCAP) structure, and the results compared with those obtained Ga-face MOSCAPs same MOCVD dielectrics. influence polarity as well other possible mechanisms formation charge identified discussed.
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Choelhwyi Bae, Cristiano Krug, Gerald Lucovsky, Arpan Chakraborty, Umesh Mishra, Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films Journal of Applied Physics. ,vol. 96, pp. 2674- 2680 ,(2004) , 10.1063/1.1772884
B. L. Swenson, U. K. Mishra, Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface Journal of Applied Physics. ,vol. 106, pp. 064902- ,(2009) , 10.1063/1.3224852
Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto, Digbijoy Neelim Nath, Pil Sung Park, Siddharth Rajan, Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces Applied Physics Letters. ,vol. 102, pp. 072105- ,(2013) , 10.1063/1.4793483
Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi, Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures Japanese Journal of Applied Physics. ,vol. 46, pp. 547- 554 ,(2007) , 10.1143/JJAP.46.547
Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung, Siddharth Rajan, Electrical properties of atomic layer deposited aluminum oxide on gallium nitride Applied Physics Letters. ,vol. 99, pp. 133503- ,(2011) , 10.1063/1.3645616
S. Keller, N. A. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. P. DenBaars, J. S. Speck, U. K. Mishra, Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition Journal of Applied Physics. ,vol. 102, pp. 083546- ,(2007) , 10.1063/1.2801406
Ramya Yeluri, Xiang Liu, Brian L. Swenson, Jing Lu, Stacia Keller, Umesh K. Mishra, Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. ,vol. 114, pp. 083718- ,(2013) , 10.1063/1.4819402
N.A. Fichtenbaum, T.E. Mates, S. Keller, S.P. DenBaars, U.K. Mishra, Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition Journal of Crystal Growth. ,vol. 310, pp. 1124- 1131 ,(2008) , 10.1016/J.JCRYSGRO.2007.12.051
J Kuzmík, G Konstantinidis, S Harasek, Ha ík, E Bertagnolli, A Georgakilas, D Pogany, ZrO2/(Al)GaN metal-oxide-semiconductor structures: characterization and application Semiconductor Science and Technology. ,vol. 19, pp. 1364- 1368 ,(2004) , 10.1088/0268-1242/19/12/006
Brianna S. Eller, Jialing Yang, Robert J. Nemanich, Electronic surface and dielectric interface states on GaN and AlGaN Journal of Vacuum Science and Technology. ,vol. 31, pp. 050807- ,(2013) , 10.1116/1.4807904