Semiconducting and electrocatalytic properties of sputtered cobalt oxide films
作者： Lynn C. Schumacher , Ingo B. Holzhueter , Ian R. Hill , Michael J. Dignam
DOI: 10.1016/0013-4686(90)90030-4
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摘要: Abstract Cobalt oxide films, fabricated by reactive sputtering in a 100% pure O 2 plasma are highly nonstoichiometric with bulk oxygen to cobalt ratio of ∼ 1.15. Conversely, surface XPS studies indicate an ranging from 1.8 3.0 and show the presence Co 3+ only region as formed films. Infrared Raman spectra however confirm both 2+ that these defective films possess spinel structure. Photoelectrochemical impedance sputtered is doped p-type semiconductor indirect bandgap E g 1.50 eV. The electrocatalytic properties for reduction evolution reported.
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