K-band circulators on semiconductor wafers
作者： J.D. Adam , H. Buhay , M.R. Daniel , G.W. Eldridge , M.H. Hanes
DOI: 10.1109/MWSYM.1996.508475
关键词:
摘要: We report on the development of K-band circulators operating at 20 and 35 GHz which have been monolithically integrated with both GaAs epitaxial GaAs-on-Si wafers. They demonstrate potential for a fully T/R module application.
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