Positron annihilation study of HVPE grown thick GaN layers
作者： M. Misheva , H. Larsson , D. Gogova , B. Monemar
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摘要: Single-crystalline GaN layers with a thickness up to 330 μm were grown by hydride vapor phase epitaxy on basal plane sapphire at gallium stable conditions in bottom-fed vertical reactor atmospheric pressure. Positron annihilation spectroscopy experiments implemented order identify native point defects the as-grown non-intentionally doped n-type GaN. Comparatively low concentrations of Ga vacancy related 10 16 17 cm -3 extracted from positron data. The defect concentration was intensity yellow photoluminescence band centered 2.2 eV. influence growth rate investigated. A trend decreasing increasing layer is observed, which correlates improving crystalline quality thickness.
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