Exploring the activation energy during nanoscale structural evolution in wet etching
作者： M.A. Gosalvez , K. Sato
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摘要: Extensive numerical simulations of anisotropic etching exact and vicinal Si(111) are performed for the first time using target rate kinetic Monte-Carlo (TR-KMC) algorithm. The results show that removal layers on is largely controlled by step propagation pit nucleation has a vanishingly small role. In turn, flow itself kink and, only to minor extent, nucleation.
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