Electron states associated with partial dislocations in silicon
作者： S. Marklund
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摘要: The electron energy bands associated with the glide set 90° and 30° partials in silicon are calculated. Rotations of bonds shifts bond lengths taken into account. results suggest possibility dislocation cores without broken bonds. Le present travail contient une calculation des bandes d'energie electroniques associees avec dislocations partielles du type et “glide set”. Le calcul tient compte de rotations orbitaux liaisons variations dans la longeur liaisons. Les resultats obtenus indiquent possibilite noyaux sans brisees.
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