Epitaxial recrystallization of alkali-ion implanted α-quartz

摘要: Abstract This paper reports on solid phase epitaxial growth (SPEG) of Cs+-, Na+- and Li+-ion beam amorphized α-quartz samples induced by thermal annealing in an oxygen rich atmosphere. The evolution the amorphous layer was monitored means Rutherford backscattering spectrometry channeling geometry (RBS-C), while migration implants measured via RBS (in case Cs) time-of-flight elastic recoil detection analysis (TOF-ERDA) Li). For all three systems, complete SPEG observed to occur at 600–900°C, with a tendency decreasing recrystallization temperature for mass implanted alkali (Cs: 875°C, Na: 800°C, Li: 650–700°C). in-diffusion into Li-irradiated during 18O atmosphere studied using TOF-ERDA. At 700°C almost 25% 16O content within modified SiO2 exchanged 18O. strong favours dissolution alkali-oxide structure providing topological freedom necessary regrowth.