Epitaxial recrystallization of amorphized α-quartz after sodium ion implantation and oxygen annealing

摘要: Abstract Solid phase epitaxial regrowth of α-quartz amorphized by ion implantation dopants appears to be an attractive method for processing this optoelectronically important material. In attempt optimize solid epitaxy α-quartz, we have studied the case 50 keV 23 Na and annealing in 18 O atmosphere at 500–850 °C. The damage profiles were monitored means Rutherford backscattering-channeling, while out-diffusion implanted 16 O⇔ exchange near-surface layers investigated using time-of-flight Elastic Recoil Detection analysis technique. As Cs-irradiated quartz, full recrystallization was observed occur Na-irradiated however, lower temperature approximately 650 °C (vs. 875 Cs). Based on these observations, offer a good compromise between low (required avoid oxidation dopants) matrix.