作者: F. Roccaforte , F. Harbsmeier , S. Dhar , K. P. Lieb
DOI: 10.1063/1.126757
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摘要: The migration of oxygen in ion-beam-amorphized c-SiO2 (α-quartz) was investigated by means nuclear reaction analysis using the resonant 18O(p,α)15N for depth profiling. Only very small amounts were observed to diffuse crystalline or Xe+-ion beam-amorphized α-quartz after high-temperature annealing. However, a dramatic occurs Cs+-implanted same temperature range (600–900 °C), where Cs diffuses out amorphized layer and epitaxial recrystallization occurs. These results point strong correlation all these processes. A mechanism explain indiffusion 18O is proposed related topological modification achieve regrowth SiO2 matrix.