作者: H. M. Branz , P. Stradins , E. Iwaniczko , M.F.A.M. van Hest , C. W. Teplin
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摘要: We have developed a new approach to growing photovoltaic-quality crystal silicon (c-Si) films on glass. Other approaches film c-Si focus increasing grain size in order reduce the deleterious effects of boundaries. Instead, we an align grains biaxially (both and out plane) so that 1) boundaries are "low-angle" less effect electronic properties material 2) subsequent epitaxial thickening is simplified. They key our use foreign template layer can be grown with biaxial texture directly