作者: A.J. Kenyon , C.E. Chryssou , T.M. Smeeton , C.J. Humphreys , D.E. Hole
DOI: 10.1016/J.OPTMAT.2005.09.052
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摘要: Abstract Experimental evidence of an efficient broadband sensitisation mechanism in erbium-implanted alumina is presented. Alumina thin films were deposited by plasma-enhanced chemical vapour deposition. The as-grown implanted with erbium. Photoluminescence excitation spectra showed that exhibit 1.53 μm luminescence even when pumped at wavelengths outside Er 3+ absorption bands. samples analysed structurally using transmission electron microscopy and energy loss spectroscopy. We postulate the sensitising species either small nanoclusters aluminium or pairs ions, though possibility defect-mediated cannot be conclusively ruled out this stage.