Photoluminescence characterisation of Er3+/Yb3+ co-implanted alumina (Al2O3) thin films and sapphire crystals
作者： C.E. Chryssou , C.W. Pitt , D.E. Hole , P.J. Chandler
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摘要: Successful incorporation both erbium and ytterbium in alumina by ion implantation is reported. Some evidence for indirect pumping of through the transfer energy from has been observed. Both plasma-enhanced CVD deposited thin films sapphire crystals were employed as substrates, Yb/sup 3+/ Er/sup concentrations ranged 2.4 at.%, to 8 at.% 0.4 0.8 respectively. The samples show strong, broad, room-temperature photoluminescence at /spl lambda/=1.53 mu/m corresponding intra-4f transitions between /sup 4/I/sub 13/2/ (first excited) 15/2/ (ground) state 3+/. full width half maximum emission spectrum high 67 nm Al/sub 2/O/sub 3/ films, it 45 nm. fluorescence lifetime measured be 4.2 ms 50 mW pump power.
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