Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
作者： Yuichiro Nanen , Bernd Zippelius , Svetlana Beljakowa , Lia Trapaidze , Michael Krieger
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.645-648.487
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摘要: The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). The preannealing process causes a decrease of the Hall mobility and the effective mobility, and an increase of the interface state density. Secondary ion mass spectroscopy (SIMS) measurements revealed that the N concentration at the SiO2/SiC interface in preannealed samples is lower than in not-preannealed samples, which might be the reason for in the increase of the interface state density. In MOSFETs without preannealing, more N atoms are piled up at the SiO2/SiC interface, leading to the lower interface state density and higher mobility.
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