引用次数
引用: 2,103
H-指数: 21
I10-指数 : 42
出版物: 141
4H-SiC MISFETs with nitrogen-containing insulators
Masato Noborio , Jun Suda , Svetlana Beljakowa , Michael Krieger
Physica Status Solidi (a) 206 ( 10) 2374 -2390
63
2009
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
Martin Hauck , Johannes Lehmeyer , Gregor Pobegen , Heiko B. Weber
Communications in Physics 2 ( 1) 5
24
2019
Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-doped SiC
Gerhard Pensl , Florin Ciobanu , Michael Krieger , Michael Laube
MRS Proceedings 742 ( 1) 321 -3212
2002
On deep level transient spectroscopy of extended defects in n-Type 4H-SiC
Jonas Weber , Heiko B. Weber , Michael Krieger
Materials Science Forum 897 201 -204
5
2016
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
Julietta Weiße , Martin Hauck , Tomasz Sledziewski , Mattias Tschiesche
Materials Science Forum 924 184 -187
7
2018
Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs
Fabian Rasinger , Gregor Pobegen , Thomas Aichinger , Heiko B. Weber
Materials Science Forum 924 277 -280
2
2018
Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy
Lia Trapaidze , R. Hollweck , Svetlana Beljakowa , Bernd Zippelius
Materials Science Forum 679-680 257 -260
5
2011
Iron-Related Defect Centers in 3C-SiC
Thanos Tsirimpis , S. Beljakova , Bernd Zippelius , Heiko B. Weber
Materials Science Forum 679-680 265 -268
1
2011
Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes
Bernd Zippelius , Michael Krieger , Heiko B. Weber , Gerhard Pensl
Materials Science Forum 679-680 571 -574
1
2011
Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
Bernd Zippelius , Michael Krieger , Heiko B. Weber , Gerhard Pensl
Materials Science Forum 615-617 393 -396
3
2009
High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
Sergey A. Reshanov , Svetlana Beljakowa , Thomas Frank , Bernd Zippelius
Materials Science Forum 615-617 765 -768
2
2009
Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
Lars S. Løvlie , Ioana Pintilie , S. Kumar C.P. , Ulrike Grossner
Materials Science Forum 615-617 497 -500
1
2009
Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects
Bernd Zippelius , Michael Krieger , Heiko B. Weber , Gerhard Pensl
Materials Science Forum 343 -346
2010
Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface
Michael Krieger , Svetlana Beljakowa , Bernd Zippelius , Valeri V. Afanas'ev
Materials Science Forum 645-648 463 -468
18
2010
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
Yuichiro Nanen , Bernd Zippelius , Svetlana Beljakowa , Lia Trapaidze
Materials Science Forum 645-648 487 -490
5
2010
Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers
Svetlana Beljakowa , Sergey A. Reshanov , Bernd Zippelius , Michael Krieger
Materials Science Forum 427 -430
2
2010
Electrical Activation of B+-Ions Implanted into 4H-SiC
Thanos Tsirimpis , Michael Krieger , Heiko B. Weber , Gerhard Pensl
Materials Science Forum 645-648 697 -700
7
2010
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
Koutarou Kawahara , Giovanni Alfieri , Michael Krieger , Tsunenobu Kimoto
Materials Science Forum 645-648 759 -762
2010
Effect of phosphorus implantation prior to oxidation on electrical properties of thermally grown SiO2/4H-SiC MOS structures
Aleksey Mikhaylov , Tomasz Sledziewski , Alexey Afanasyev , Victor Luchinin
Materials Science Forum 806 133 -138
8
2014
Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
Tomasz Sledziewski , Gunter Ellrott , W. Rösch , Heiko B. Weber
Materials Science Forum 347 -350
2
2015