Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes
作者： Bernd Zippelius , Michael Krieger , Heiko B. Weber , Gerhard Pensl , Hiroyuki Nagasawa
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.679-680.571
关键词:
摘要: The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced.
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