Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface
作者： Michael Krieger , Svetlana Beljakowa , Bernd Zippelius , Valeri V. Afanas'ev , Anton J. Bauer
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.645-648.463
关键词: Dielectric 、 Spectral line 、 Band gap 、 Voltage 、 Analytical chemistry 、 Thermal 、 Condensed matter physics 、 Characterization (materials science) 、 Oxide 、 Materials science 、 Relaxation (NMR)
摘要: … 2: Density of interface traps Dit as a function of the energy Eit in the bandgap of 4H-SiC taken on a MOS capacitor #1 with a ”thick” oxide (dox = 40nm) by means of TDRC (circles) and …
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