Verification of Fowler-Nordheim electron tunneling mechanism in Ni/SiO 2 /n-4H SiC and n + poly-Si/SiO 2 /n-4H SiC MOS devices by different models

摘要: Abstract This article emphasizes verification of Fowler–Nordheim electron tunneling mechanism in the Ni/SiO 2 / n -4H SiC MOS devices by developing three different kinds models. The standard semiconductor equations are categorically solved to obtain change Fermi energy level with effect temperature and field that extend support determine sustainable accurate current through oxide layer. forward reverse bias currents variation electric simulated help models developed us for applying adequate conditions. latter is quite from former terms devices. barrier height quantum mechanical, temperature, fields considered as effective generation current–field ( J – F ) curves under biases but mechanical void latter. In addition, also carrier concentration -type 4H relation between them established.