PECVD and thermal gate oxides on 3C vs. 4H SiC : Impact on leakage, traps and energy offsets
作者： T. Gutt , H. M. Przewlocki , K. Piskorski , A. Mikhaylov , M. Bakowski
DOI: 10.1149/2.0101509JSS
关键词:
摘要: Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD thermal oxides on 3C-SiC 4H-SiC were compared. The difference in tra ...
ecsdl.org参考文章(10)
V.V. Afanas'ev, Electronic properties of SiO 2 /SiC interfaces Microelectronic Engineering. ,vol. 48, pp. 241- 248 ,(1999) , 10.1016/S0167-9317(99)00379-2
Aleksey I. Mikhaylov, Alexey V. Afanasyev, Victor V. Luchinin, Sergey A. Reshanov, Adolf Schöner, Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO 2 interface MRS Proceedings. ,vol. 1693, pp. 174- 179 ,(2014) , 10.1557/OPL.2014.619
Muhammad Nawaz, On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs Active and Passive Electronic Components. ,vol. 2015, pp. 1- 12 ,(2015) , 10.1155/2015/651527
R. H. Fowler, The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures Physical Review. ,vol. 38, pp. 45- 56 ,(1931) , 10.1103/PHYSREV.38.45
Michael Krieger, Svetlana Beljakowa, Bernd Zippelius, Valeri V. Afanas'ev, Anton J. Bauer, Yuichiro Nanen, Tsunenobu Kimoto, Gerhard Pensl, Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface Materials Science Forum. ,vol. 645-648, pp. 463- 468 ,(2010) , 10.4028/WWW.SCIENTIFIC.NET/MSF.645-648.463
R. J. Powell, Photoinjection into SiO2: Use of Optical Interference to Determine Electron and Hole Contributions Journal of Applied Physics. ,vol. 40, pp. 5093- 5101 ,(1969) , 10.1063/1.1657358
L. M. Lin, P. T. Lai, Improved high-field reliability for a SiC metal–oxide–semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric Journal of Applied Physics. ,vol. 102, pp. 054515- ,(2007) , 10.1063/1.2776254
Henryk M. Przewlocki, Theory and applications of internal photoemission in the MOS system at low electric fields Solid-state Electronics. ,vol. 45, pp. 1241- 1250 ,(2001) , 10.1016/S0038-1101(00)00274-4
K. Piskorski, H. Przewlocki, R. Esteve, M. Bakowski, Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate Opto-electronics Review. ,vol. 20, pp. 67- 74 ,(2012) , 10.2478/S11772-012-0005-2
Ranbir Singh, Allen R. Hefner, Reliability of SiC MOS devices Solid-state Electronics. ,vol. 48, pp. 1717- 1720 ,(2004) , 10.1016/J.SSE.2004.05.005