Crystal Growth and Luminescence Properties of Yb-doped Gd3Al2Ga3O12 Infra-red Scintillator
作者： Akira Suzuki , Shunsuke Kurosawa , Shinji Nagata , Tomoo Yamamura , Jan Pejchal
DOI: 10.1016/J.OPTMAT.2014.04.007
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摘要: Abstract 1-mol%-Yb-doped Gd3Al2Ga3O12 infra-red scintillator crystal has been studied as a novel implantable radiation monitor in therapy. Powder X-ray diffraction measurement and chemical analysis with field emission scanning microscope wavelength dispersive spectrometer determined its garnet structure average composition of Yb0.03±0.01Gd2.99±0.07Al2.21±0.08Ga2.64±0.09O12.10±0.09. Transmittance measurements reached high values approximately 70% the human body transparency region between 650 to 1200 nm. Photoluminescence peaks were detected around 970 1030 nm under 940 nm excitation Xe lamp. Infra-red scintillation emissions clearly observed due Yb3+ 4f–4f transitions excitation. Therefore, these results suggest that Yb-doped might be used an material.
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