作者: A. Novosselov , A. Yoshikawa , M. Nikl , N. Solovieva , J.-H. Lee
DOI: 10.1016/J.RADMEAS.2004.02.003
关键词:
摘要: Shaped single crystals of (Lu x Gd 1-x ) 3 Ga 5 O 12 (0.0 ≤ 1.0) and (W 0.05 Lu 0.95-x 0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure a linear compositional dependency crystal lattice parameter in system Yb:(Gd, Lu) are formed. Measured optical absorption spectra samples show 4f-4f transitions related to 3+ ion at 275 310 nm, also an onset charge transfer from oxygen ligands or Yb cations below 240 nm. A complete absence luminescence under X-ray excitation any investigated was explained overlapping that ions. For specific composition 1.5 intense defect-host lattice-related emission, which achieve about 40% integrated intensity compared Bi 4 Ge , found.