Influence of tungsten doping on dielectric, electrical and ferroelectric behavior of BaBi4Ti4O15 ceramics
作者： JD Bobić , RM Katiliute , M Ivanov , NI Ilić , AS Dzunuzović
DOI: 10.1016/J.JALLCOM.2017.01.280
关键词:
摘要: Abstract The effect of tungsten (W 6+ ) doping on modification the structure, dielectric, ferroelectric and electrical properties BaBi 4 Ti 4-x W x O 15 (BBTWx, x = 0, 0.03, 0.05 0.07) was investigated. ceramic samples were synthesized by conventional solid state reaction method. XRD data indicated formation single-phase layered crystalline structure that confirmed orthorhombic type all compositions with space group A2 1 am . SEM micrographs suggest grain size slightly decreases doping. temperature dependent dielectric study revealed constant while transition increases. Influence relaxor behavior diffuseness phase is also discussed. Effect investigated in terms ion defect mechanism. studied P-E hysteresis loop it observed remanent polarization increases a small level
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