ELECTRICAL PROPERTIES OF LAYER STRUCTURED BI4Ti3O12 FERROELECTRICS WITH W6+ DOPING
作者： L. N. ZHANG , G. R. LI , S. C. ZHAO , A. L. DING , Q. R. YIN
DOI: 10.1080/10584580600659936
关键词:
摘要: ABSTRACT W6+-doped Bi4Ti3O12 (BIT-W) layer structured ferroelectric ceramics have been prepared and electrical properties were investigated. The resistivity of BIT-W in a direct current circuit was increased obviously by W6+-doping. ac complex impedance plot is different from that undoped Bi4Ti3O12, indicating effects grains, grain boundaries ferroelectric-electrode interfaces. Hysteresis loops studied. W6+-doping enhances the remnant polarization because domain pinning effect caused oxygen vacancies reduced. Thermally stimulated depolarization results indicated piezoelectric came intrinsic dipoles defect dipoles.
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